IEEE Photonics Journal (Jan 2024)

Effect of Inductively Coupled Plasma Etching Parameters on n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N Ohmic Contact

  • Shanshan Yang,
  • Meixin Feng,
  • Yuzhen Liu,
  • Wenjun Xiong,
  • Biao Deng,
  • Yingnan Huang,
  • Chuanjie Li,
  • Qiming Xu,
  • Yanwei Shen,
  • Qian Sun,
  • Hui Yang

DOI
https://doi.org/10.1109/JPHOT.2024.3408876
Journal volume & issue
Vol. 16, no. 5
pp. 1 – 5

Abstract

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High-Al-content n-AlGaN ohmic contact is very important for deep ultraviolet optoelectrical devices. However, it often suffers from the etching damages formed in inductively coupled plasma (ICP) etching. In this paper, the effects of ICP etching parameters on n-Al0.5Ga0.5N ohmic contact, including RF power, ICP power, and etching gas, were systematically investigated and analyzed by X-ray photoelectron spectroscopy and circular transmission line model. Finally, n-Al0.5Ga0.5N ohmic contact was achieved with a low specific contact resistivity of 8.7×10-4 Ω·cm2, and AlGaN-based UVC light-emitting diodes (LEDs) showed a low operation voltage of only 5.6 V at the injection current density of 16 A/cm2.

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