Discover Nano (Nov 2023)

Enhancement of Ni–Zn ferrite nanoparticles parameters via cerium element for optoelectronic and energy applications

  • R. M. Kershi,
  • A. M. Alshehri,
  • R. M. Attiyah

DOI
https://doi.org/10.1186/s11671-023-03921-6
Journal volume & issue
Vol. 18, no. 1
pp. 1 – 17

Abstract

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Abstract This work is concerned with fabricating ferrite nanoparticles of nickel–zinc with the chemical formula: Ni0.55Zn0.45Fe2−x Ce x O4, 0 ≤ x ≤ 0.011 by co-deposition technique and modifying their electrical, microscopic, spectroscopic, optical, electrical and dielectric properties as advanced engineering materials through doping with the cerium (Ce) element. XRD patterns displayed that the samples have a monophasic Cerium–Nickel–zinc (CNZ) spinel structure without other impurities for cerium concentration (x) ≤ 0.066. Both values of crystallite size and lattice parameters decrease from 33.643 to 23.137 nm and from 8.385 to 8.353 nm, respectively, with the increasing Ce ions substitution content from 0 to 0.066. SEM images indicate that grains of the fabricated compounds are smaller, more perfect, more homogeneous, and less agglomeration than those of the un-doped Ni–Zn nano-ferrites. The maximum intensity of first-order Raman spectral peaks (E g, F2g(2), A1g(2), and A1g(1)) of CNZ ferrite nanoparticles are observed at about (330, 475, 650, 695) cm−1, respectively, that confirms the CNZ samples have the cubic spinel structure. The direct and indirect optical energy bandgaps of CNZ samples have a wide spectrum of values from semiconductors to insulators according to cerium concentration. The results showed that the values of dielectric constant, dielectric loss factor, and Ac conductivity and the conductivity transition temperature are sensitive to cerium ions content. AC conductivity exhibited by the CNZ samples has the semiconductor materials behavior, where the AC conductivity increases due to temperature or doping concentration. The results indicate that Ni0.55Zn0.45Fe1.944Ce0.066O4 ferrite nanoparticles may be selected for optoelectronic devices, high-frequency circuits, and energy storage applications.

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