Two-dimensional electronic transport and surface electron accumulation in MoS2

M. D. Siao; W. C. Shen; R. S. Chen; Z. W. Chang; M. C. Shih; Y. P. Chiu; C.-M. Cheng

doi:10.1038/s41467-018-03824-6

Nature Communications (Apr 2018)

Two-dimensional electronic transport and surface electron accumulation in MoS2

M. D. Siao,
W. C. Shen,
R. S. Chen,
Z. W. Chang,
M. C. Shih,
Y. P. Chiu,
C.-M. Cheng

Affiliations

M. D. Siao: Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology
W. C. Shen: Department of Electronic Engineering, National Taiwan University of Science and Technology
R. S. Chen: Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology
Z. W. Chang: Department of Physics, National Taiwan Normal University
M. C. Shih: Department of Physics, National Taiwan University
Y. P. Chiu: Department of Physics, National Taiwan Normal University
C.-M. Cheng: National Synchrotron Radiation Research Center

DOI: https://doi.org/10.1038/s41467-018-03824-6
Journal volume & issue: Vol. 9, no. 1
pp. 1 – 12

Abstract

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In absence of dangling bonds, van der Waals layered crystals are expected to have inert surfaces. In contrast, here the authors show presence of surface electron accumulation in MoS2, with a surface electron concentration nearly four orders of magnitude higher than that of MoS2 inner bulk.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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