Preparation and thermal volatility characteristics of In2O3/ITO thin film thermocouple by RF magnetron sputtering
Yantao Liu,
Wei Ren,
Peng Shi,
Dan Liu,
Ming Liu,
Weixuan Jing,
Bian Tian,
Zuoguang Ye,
Zhuangde Jiang
Affiliations
Yantao Liu
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Wei Ren
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Peng Shi
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Dan Liu
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Ming Liu
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Weixuan Jing
International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University, Xi’an 710049, China
Bian Tian
International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University, Xi’an 710049, China
Zuoguang Ye
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Zhuangde Jiang
International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University, Xi’an 710049, China
In2O3/ITO thin film thermocouples for high temperature measurement (up to 1250 °C) were prepared by radio frequency magnetron sputtering method with different annealing temperatures from 1100 °C to 1250 °C. The changes with microstructure characteristics and the thickness of the thin film thermocouples were investigated as a function of sintering temperature in the range of 1100 °C -1250 °C and annealing time from 2 hrs to 10 hrs at 1200 °C by using XRD and SEM techniques. The thermoelectric output was measured and its results indicated that this thermocouple had a steady and constant voltage output from room temperature to 1247 oC. The thermoelectric voltage and Seebeck coefficient of In2O3/ITO thermocouples measured at 1247 oC were 166.7 mV and 136.3 μV/oC, respectively.
