The Study on the Droop Effect in the InGaN&#x002F;AlGaInN MQWs With Lattice-Matched AlGaN&#x002F;InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

Fulong Jiang; Yaying Liu; Menghan Liu; Ningze Zhuo; Peng Gao; Huajie Fang; Peng Chen; Bin Liu; Xiangqian Xiu; Zili Xie; Ping Han; Yi Shi; Rong Zhang; Youdou Zheng

doi:10.1109/JPHOT.2018.2820692

IEEE Photonics Journal (Jan 2018)

The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

Fulong Jiang,
Yaying Liu,
Menghan Liu,
Ningze Zhuo,
Peng Gao,
Huajie Fang,
Peng Chen,
Bin Liu,
Xiangqian Xiu,
Zili Xie,
Ping Han,
Yi Shi,
Rong Zhang,
Youdou Zheng

Affiliations

Fulong Jiang: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Yaying Liu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Menghan Liu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Ningze Zhuo: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Peng Gao: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Huajie Fang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Peng Chen: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Bin Liu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Xiangqian Xiu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Zili Xie: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Ping Han: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Yi Shi: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Rong Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Youdou Zheng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

DOI: https://doi.org/10.1109/JPHOT.2018.2820692
Journal volume & issue: Vol. 10, no. 2
pp. 1 – 9

Abstract

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We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photoluminescence measurement is performed by Ti-sapphire pulse laser with the maximal carrier density of 1020 cm-3. Under such high carrier density, the conventional InGaN/GaN MQWs (C-MQWs) have an additional nonradiative loss of carriers and suffer from the efficiency droop effect, while slight droop behavior is observed in the SL-MQWs sample. The results show that the substitution of AlGaN/InGaN superlattices as quantum barriers can effectively suppress the droop behavior at highly excited condition.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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