Waveguide Schottky photodetector with tunable barrier based on Ti3C2Tx/p-Si van der Waals heterojunction
Yang Changming,
Qin Shiyu,
Zuo Yan,
Shi Yang,
Bie Tong,
Shao Ming,
Yu Yu
Affiliations
Yang Changming
Wuhan National Laboratory for Optoelectronics and School of Optical and Electrical Information, Huazhong University of Science and Technology, Wuhan430074, China
Qin Shiyu
Wuhan National Laboratory for Optoelectronics and School of Optical and Electrical Information, Huazhong University of Science and Technology, Wuhan430074, China
Zuo Yan
Wuhan National Laboratory for Optoelectronics and School of Optical and Electrical Information, Huazhong University of Science and Technology, Wuhan430074, China
Shi Yang
Wuhan National Laboratory for Optoelectronics and School of Optical and Electrical Information, Huazhong University of Science and Technology, Wuhan430074, China
Bie Tong
Wuhan National Laboratory for Optoelectronics and School of Optical and Electrical Information, Huazhong University of Science and Technology, Wuhan430074, China
Shao Ming
Wuhan National Laboratory for Optoelectronics and School of Optical and Electrical Information, Huazhong University of Science and Technology, Wuhan430074, China
Yu Yu
Wuhan National Laboratory for Optoelectronics and School of Optical and Electrical Information, Huazhong University of Science and Technology, Wuhan430074, China
MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface. Given the solution-processability and tunable work function, MXene also holds great potential for wide-range photodetection and integrated optics. Here, we demonstrate a waveguide integrated Schottky photodetector based on Ti3C2Tx/Si van der Waals heterojunction. Specifically, the barrier of the Schottky photodetector can be adjusted by using simple surface treatment. The work function of the Ti3C2Tx is reduced from 4.66 to 4.43 eV after vacuum annealing, and the barrier height of Ti3C2Tx/p-Si Schottky junction is correspondingly increased from 0.64 to 0.72 eV, leading to 215 nm working wavelength blue-shift. The photodetector exhibits working wavelength tunability in short-wavelength infrared regions due to the engineered Schottky barrier. To our best knowledge, this is the first demonstration of utilizing MXene in waveguide-integrated photodetection, showing the potential applications for various scenarios thanks to the flexible working wavelength range induced by the tunable barrier.
