Low-dispersive silicon nitride waveguide resonators by nanoimprint lithography

Abstract

In this study, we demonstrate the fabrication of waveguide resonators using nanoimprint technology. Without relying on traditionally costly lithography methods, such as electron-beam lithography or stepper lithography, silicon nitride (Si3N4) resonators with high-quality factors up to the order of 105 can be realized at C-band by nanoimprint lithography. In addition, by properly designing the waveguide geometry, a low-dispersive waveguide can be achieved with waveguide dispersion at around −35 ps/nm/km in the normal dispersion regime, and the waveguide dispersion can be further tuned to be 29 ps/nm/km in the anomalous dispersion regime with the polymer cladding. The tunability of nanoimprinted devices is demonstrated by the aid of microheaters, realizing on-chip optical functionalities. This work offers the potential to fabricate low-dispersive waveguide resonators for integrated modulators and filters in a significantly cost-effective and process-friendly scheme.