Sensors (Mar 2016)

Effect of Bismuth Oxide on the Microstructure and Electrical Conductivity of Yttria Stabilized Zirconia

  • Liwei Liu,
  • Zheng Zhou,
  • He Tian,
  • Jixue Li

DOI
https://doi.org/10.3390/s16030369
Journal volume & issue
Vol. 16, no. 3
p. 369

Abstract

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Bismuth oxide (Bi2O3)-doped yttria-stabilized zirconia (YSZ) were prepared via the solid state reaction method. X-ray diffraction and electron diffraction spectroscopy results indicate that doping with 2 mol% Bi2O3 and adding 10 mol% yttria result in a stable zirconia cubic phase. Adding Bi2O3 as a dopant increases the density of zirconia to above 96%, while reducing its normal sintering temperature by approximately 250 °C. Moreover, electrical impedance analyses show that adding Bi2O3 enhances the conductivity of zirconia, improving its capability as a solid electrolyte for intermediate or even lower temperatures.

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