Study on the optimal process parameters for stripping the X-ETFE insulation layer of aviation wires by a small semiconductor laser

Abstract

A reasonable laser wire stripping process parameter set is a prerequisite for high-quality and high-efficiency wire stripping. For the X-ETFE insulated wire used in aviation, this study explores the method of obtaining the optimal stripping process parameters based on a 405 nm wavelength semiconductor laser. Build energy conversion model, mobile heat source model, and finite element simulation numerical model of the laser stripping insulating layer process. Based on the single-factor analysis method, simulate the effect of laser power, scanning speed, and processing time on the kerf width, heat-affected zone width, and cutting seam depth of the insulating layer. The results show that increasing the laser power to improve the stripping efficiency will also increase the width of the kerf and heat-affected zone, and increasing the scanning speed can effectively reduce the kerf width. A reasonable combination of laser power and scanning speed can improve stripping efficiency while ensuring quality. According to the single-factor simulation analysis results, select the possible value levels for each parameter to carry out the actual laser wire stripping orthogonal test. There is a good correspondence between the range analysis results of the test data of each stripping quality evaluation index and the conclusions obtained from the single-factor simulation, which verifies the reliability of getting the optimal combination of laser stripping process parameters through the orthogonal test.