Self-Biased Bidomain LiNbO<sub>3</sub>/Ni/Metglas Magnetoelectric Current Sensor
Mirza I. Bichurin,
Roman V. Petrov,
Viktor S. Leontiev,
Oleg V. Sokolov,
Andrei V. Turutin,
Victor V. Kuts,
Ilya V. Kubasov,
Alexander M. Kislyuk,
Alexander A. Temirov,
Mikhail D. Malinkovich,
Yuriy N. Parkhomenko
Affiliations
Mirza I. Bichurin
Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia
Roman V. Petrov
Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia
Viktor S. Leontiev
Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia
Oleg V. Sokolov
Department of Design and Technology of Radioequipment, Yaroslav-the-Wise Novgorod State University, ul. B. St. Petersburgskaya, 41, 173003 Veliky Novgorod, Russia
Andrei V. Turutin
Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia
Victor V. Kuts
Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia
Ilya V. Kubasov
Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia
Alexander M. Kislyuk
Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia
Alexander A. Temirov
Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia
Mikhail D. Malinkovich
Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia
Yuriy N. Parkhomenko
Department of Materials Science of Semiconductors and Dielectrics, National University of Science and Technology MISiS, Leninskiy Prospekt 4, 119049 Moscow, Russia
The article is devoted to the theoretical and experimental study of a magnetoelectric (ME) current sensor based on a gradient structure. It is known that the use of gradient structures in magnetostrictive-piezoelectric composites makes it possible to create a self-biased structure by replacing an external magnetic field with an internal one, which significantly reduces the weight, power consumption and dimensions of the device. Current sensors based on a gradient bidomain structure LiNbO3 (LN)/Ni/Metglas with the following layer thicknesses: lithium niobate—500 μm, nickel—10 μm, Metglas—29 μm, operate on a linear section of the working characteristic and do not require the bias magnetic field. The main characteristics of a contactless ME current sensor: its current range measures up to 10 A, it has a sensitivity of 0.9 V/A, its current consumption is not more than 2.5 mA, and its linearity is maintained to an accuracy of 99.8%. Some additional advantages of a bidomain lithium niobate-based current sensor are the increased sensitivity of the device due to the use of the bending mode in the electromechanical resonance region and the absence of a lead component in the device.
