About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K

Abstract

Proposed a model of silicon MOS transistor designed for pulsed operation up to T = 550 K. The main feature of the model is an abnormally high level of doping drain region. The estimation of the rate of degradation of the operating parameters of the device. It is shown that the uptime of the device when the channel length L ~ 600 nm and depth of its location beneath the work surface x_10 500 nm is not less than 1.5 years. Calculations of the degradation performed for T = (600-700) K may be useful in the design of high-temperature devices based on wide bandgap semiconductors.

Keywords

• silicon field-effect transistor microwave
• pulsed operation
• a high level of doping drain region
• the rate of degradation