Photoluminescence study of solution-deposited Cu2BaSnS4 thin films

Abstract

To experimentally identify the character of radiative transitions in trigonal Cu2BaSnS4, we conduct temperature and excitation intensity dependent photoluminescence (PL) measurements in the temperature range of 15–300 K. The low-temperature near band edge PL spectrum is interpreted as the free exciton at 2.11 eV and the bound exciton at 2.08 eV, coupled with associated phonon-assisted transitions. In the low energy region, we assign the dominant defect emission at 1.96 eV to donor–acceptor-pair recombination and the weak broad emission at 1.6 eV to the free-to-bound transition. The activation energies and temperature shift for the radiative transitions are determined and discussed. Above 90 K, the free exciton recombination becomes the dominant radiative transition, with its energy shift mainly governed by the contribution of optical phonons.