Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence
Peng Wang,
Wenwu Pan,
Kai Wang,
Xiaoyan Wu,
Li Yue,
Qian Gong,
Shumin Wang
Affiliations
Peng Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China
Wenwu Pan
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China
Kai Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China
Xiaoyan Wu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China
Li Yue
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China
Qian Gong
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China
Shumin Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China
InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.
