Green-wavelength GaN-based photonic-crystal surface-emitting lasers

Natsuo Taguchi; Akinori Iwai; Masahiro Noguchi; Hiroaki Takahashi; Atsuo Michiue; Menaka De Zoysa; Takuya Inoue; Kenji Ishizaki; Susumu Noda

doi:10.35848/1882-0786/ad126f

Applied Physics Express (Jan 2024)

Green-wavelength GaN-based photonic-crystal surface-emitting lasers

Natsuo Taguchi,
Akinori Iwai,
Masahiro Noguchi,
Hiroaki Takahashi,
Atsuo Michiue,
Menaka De Zoysa,
Takuya Inoue,
Kenji Ishizaki,
Susumu Noda

Affiliations

Natsuo Taguchi: Nichia Research Institute, Nichia Corporation, Anan, Tokushima 774-8601, Japan; Department of Electronic Science and Engineering, Kyoto University , Kyoto 615-8510, Japan
Akinori Iwai: Nichia Research Institute, Nichia Corporation, Anan, Tokushima 774-8601, Japan; Department of Electronic Science and Engineering, Kyoto University , Kyoto 615-8510, Japan
Masahiro Noguchi: Nichia Research Institute, Nichia Corporation, Anan, Tokushima 774-8601, Japan
Hiroaki Takahashi: Nichia Research Institute, Nichia Corporation, Anan, Tokushima 774-8601, Japan; Department of Electronic Science and Engineering, Kyoto University , Kyoto 615-8510, Japan
Atsuo Michiue: Nichia Research Institute, Nichia Corporation, Anan, Tokushima 774-8601, Japan; Department of Electronic Science and Engineering, Kyoto University , Kyoto 615-8510, Japan
Menaka De Zoysa: Photonics and Electronics Science and Engineering Center, Kyoto University , Kyoto 615-8510, Japan
Takuya Inoue: Photonics and Electronics Science and Engineering Center, Kyoto University , Kyoto 615-8510, Japan
Kenji Ishizaki: Photonics and Electronics Science and Engineering Center, Kyoto University , Kyoto 615-8510, Japan
Susumu Noda: Department of Electronic Science and Engineering, Kyoto University , Kyoto 615-8510, Japan; Photonics and Electronics Science and Engineering Center, Kyoto University , Kyoto 615-8510, Japan

DOI: https://doi.org/10.35848/1882-0786/ad126f
Journal volume & issue: Vol. 17, no. 1
p. 012002

Abstract

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Visible-wavelength GaN-based photonic-crystal surface-emitting lasers (PCSELs) have attracted attention for various applications, such as materials processing, high-brightness illuminations, and displays. In this letter, we demonstrate GaN-based PCSELs at green wavelengths. We formed a photonic crystal (PC) in p-GaN and filled holes of the PC with SiO _2 to ensure device stability. Through a current injection test under pulsed conditions and spectral analysis, we confirmed that the fabricated device possessed Γ-point single-mode oscillation at wavelengths above 505 nm. Our results have the potential to further expand the applications of PCSELs and semiconductor lasers in visible region.

Published in Applied Physics Express

ISSN: 1882-0778 (Print); 1882-0786 (Online)
Publisher: IOP Publishing
Country of publisher: United Kingdom
LCC subjects: Science: Physics
Website: https://iopscience.iop.org/journal/1882-0786

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