Development of 1 700 V SiC SBD Device

Abstract

It presented the structure design, manufacture technology and static performance test of 1 700 V SiC SBD devices. The epitaxy material structure and device structure were obtained by simulation,two key processes including passivation and metalation were analyzed and optimized. Forward and reverse static performances of the devices were tested, and the test results indicated that the blocking voltage was over 1 700 V and the current density was 118 A/cm2. In addition, all the devices passed the 100-cycle temperature shock test and 168 h high-temperature reverse bias.

Keywords

• SiC SBD device
• ohmic contact
• passivation
• high-temperature reliability