Design and fabrication of low-loss antireflection structures for Si windows in 10–30 THz
Huiting Chang,
Liu Liu,
Yanan Song,
Chi Zhang,
Xinhua Hu
Affiliations
Huiting Chang
Department of Materials Science, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China
Liu Liu
Department of Materials Science, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China
Yanan Song
Department of Materials Science, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China
Chi Zhang
Department of Materials Science, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China
Xinhua Hu
Department of Materials Science, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China
We report on the design, fabrication, and characterization of low-loss antireflection (AR) structures for Si windows in 10–30 THz. Based on scattering-matrix simulations and effective medium theory, optimal Si filling ratios are presented for AR structures composed of Si-rod arrays and holey-Si films with different periods. To reduce the difficulties in fabrications, we fabricated Si rod arrays with optimal AR parameters. Experiments show that by using a single layer of AR structure, the transmission of Si wafer can be enhanced by 38% at 20 THz, agreeing well with numerical simulations.
