Dynamically controlled charge sensing of a few-electron silicon quantum dot
C. H. Yang,
W. H. Lim,
F. A. Zwanenburg,
A. S. Dzurak
Affiliations
C. H. Yang
Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales, Sydney 2052, Australia
W. H. Lim
Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales, Sydney 2052, Australia
F. A. Zwanenburg
Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales, Sydney 2052, Australia
A. S. Dzurak
Centre of Excellence for Quantum Computation and Communication Technology, School of Electrical Engineering & Telecommunications, The University of New South Wales, Sydney 2052, Australia
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitally-controlled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge upset events. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level.
