Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

Abstract

Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a single phase has always proven to be extremely difficult. This work reports a simple method for the synthesis of single-phase AlSb. Subsequently, consolidation was done into a near single-phase highly dense semiconductor in a form usable for thermoelectric applications. Further, the thermoelectric properties of this system are accounted for the first time. In addition, the mechanical properties of the intermetallic compound are briefly discussed for a possibility of further use.

Keywords

• controlled melting
• vacuum hot pressing
• semiconductor
• XRD
• thermoelectric