Growing and polishing methods aiming at CVD diamond wafer over 10-inch

Abstract

Flat-surfaced and large-size diamond wafers are essential for industrial applications, analogous to silicon (Si) wafers over 10-inch. A promising approach for the industrial-scale production of large-size diamond wafers involves chemical vapor deposition (CVD) techniques that generate large-area plasma. This article explores the growing and polishing methods aiming at CVD diamond wafers over 10-inch, based on our previous works and existing literature. The continuous growing strategy is proposed by combining radio frequency induction coupled plasma-enhanced CVD (RFICP CVD) and repositionable (or movable) substrate based on the Van der Drift growth mechanism. Molten iron erosion polishing (MIEP) is considered a method capable of polishing wafers over 10-inch due to its high material removal rate (MRR), size-unlimited, great stress-released, and damage-free characteristics. The proposed methodology lays the foundation for manufacturing flat-surfaced, large-sized diamond wafers for application-oriented purposes.

Keywords

• cvd diamond wafer
• growing
• polishing
• miep