Partial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface

Abstract

High quality robust two-dimensional electron gas (2DEG) LaAlO3/SrTiO3 (LAO/STO) interfaces are produced using pulsed laser deposition and an acid-free substrate Ti-termination process, resulting in single unit cell terraces. Temperature dependent resistance measurements show two hysteresis anomalies around 80 K and 160 K. By using Hall measurements, we find an Arrhenius dependence in charge carrier density describing a partial carrier freeze-out below ∼80 K. We show that these two resistance anomalies are unrelated to the temperature dependence of the charge carrier density despite the tempting coincidence of the low temperature hysteresis feature and the freeze-out process. A two-carrier model is required to accurately estimate the activation energy of the thermally activated type charge carriers, which are found to be ∼5 to 7 meV. These results support the theory that oxygen vacancy defects contribute to the metallic conductivity at the 2DEG LAO/STO interface even for annealed samples.