Research on Silicon-Substrate-Integrated Widely Tunable, Narrow Linewidth External Cavity Lasers

Xuan Li; Junce Shi; Long Wei; Keke Ding; Yuhang Ma; Zaijin Li; Lin Li; Yi Qu; Zhongliang Qiao; Guojun Liu; Lina Zeng

doi:10.3390/cryst12050674

Crystals (May 2022)

Research on Silicon-Substrate-Integrated Widely Tunable, Narrow Linewidth External Cavity Lasers

Xuan Li,
Junce Shi,
Long Wei,
Keke Ding,
Yuhang Ma,
Zaijin Li,
Lin Li,
Yi Qu,
Zhongliang Qiao,
Guojun Liu,
Lina Zeng

Affiliations

Xuan Li: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Junce Shi: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Long Wei: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Keke Ding: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Yuhang Ma: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Zaijin Li: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Lin Li: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Yi Qu: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Zhongliang Qiao: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Guojun Liu: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
Lina Zeng: Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, Academician Team Innovation Center of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China

DOI: https://doi.org/10.3390/cryst12050674
Journal volume & issue: Vol. 12, no. 5
p. 674

Abstract

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Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and high side-mode suppression ratio external cavity lasers have attracted much attention for their merits. In this paper, two main device-integrated structures for achieving widely tunable, narrow linewidth external cavity lasers on silicon substrates are reviewed and compared in detail, such as MRR-integrated structure and MRR-and-MZI-integrated structure of external cavity semiconductor lasers. Then, the chip-integrated structures are briefly introduced from the integration mode, such as monolithic integrated, heterogeneous integrated, and hybrid integrated. Results show that the silicon-substrate-integrated external cavity lasers are a potential way to realize a wide tuning range, high power, single mode, stable spectral output, and high side-mode suppression ratio laser output.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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