Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells

Ding Ding; Weiye Liu; Jiaping Guo; Xinhui Tan; Wei Zhang; Lili Han; Zhaowei Wang; Weihua Gong; Xiansheng Tang

doi:10.1109/JPHOT.2023.3269082

IEEE Photonics Journal (Jan 2023)

Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells

Ding Ding,
Weiye Liu,
Jiaping Guo,
Xinhui Tan,
Wei Zhang,
Lili Han,
Zhaowei Wang,
Weihua Gong,
Xiansheng Tang

Affiliations

Ding Ding: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China
Weiye Liu: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China
Jiaping Guo: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China
Xinhui Tan: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China
Wei Zhang: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China
Lili Han: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China
Zhaowei Wang: ORCiD; Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China
Weihua Gong: Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China
Xiansheng Tang: ORCiD; Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, China

DOI: https://doi.org/10.1109/JPHOT.2023.3269082
Journal volume & issue: Vol. 15, no. 3
pp. 1 – 4

Abstract

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According to the classical theory, multi-quantum wells (MQWs) have quantum confinement effect on photo-generated carriers, which limits its application in light-to-electric devices. However, relevant experiments showed that a large proportion of photo-generated carriers can escape from MQWs sandwiched in the p-type layer and n-type layer (PIN structure), but not in the NIN structure. In order to study this phenomenon carefully, we applied positive and negative bias to an NIN structure respectively to simulate the PIN structure. By analyzing the photoluminescence (PL) spectra, we observed a weak escape behavior of photon-generated carriers among QWs in NIN structure. The experiment results indicate that strong electric field could drive carriers to escape from QWs rather than relaxation and recombination, while in NIN structure the inhomogeneous distribution of the electric field intensity reduces the carrier transport efficiency. The further study will give new ideas to design and produce photoelectric devices.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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