International Journal of Nanomedicine (Nov 2019)
Temperature Dependence Of AOS Thin Film Nano Transistors For Medical Applications
Abstract
Changhe Huo,1,2,* Mingzhi Dai,2,3,* Yongbin Hu,4 Xingye Zhang,2,3 Weiliang Wang,2,3 Hengbo Zhang,5 Kemin Jiang,2,3 Pengjun Wang,6 Thomas J Webster,7 Liqiang Guo,4 Wenqing Zhu1 1School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People’s Republic of China; 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China; 4Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang 212013, People’s Republic of China; 5School of Electrical Engineering and Information, Sichuan University, Chengdu 610065, People’s Republic of China; 6College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, People’s Republic of China; 7Department of Chemical Engineering, Northeastern University, MA, Boston 02115, USA*These authors contributed equally to this workCorrespondence: Pengjun WangCollege of Electrical and Electronic Engineering, Wenzhou University, Wenzhou 325035, People’s Republic of ChinaEmail [email protected] J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115 USATel +1 617 3736585Email [email protected]: A novel temperature dependent amorphous nano oxide semiconductor (AOS) thin-film transistor (TFT) is reported here for the first time, which is vastly different from conventional behavior. In the literature, the threshold voltage of TFTs decreases with increasing temperature. Here, the threshold voltage increased at higher temperatures, which is different from previously reported results and was repeated on different samples.Methods: Electrical experiments (such as I-V measurements and photoelectron spectrometer experiments) were performed in order to explain such behavior. Double sweeping gate voltage measurements were performed to investigate the mechanism for the temperature dependent behavior.Results: It was found that there was a change of trap charge under thermal stress, which was released after the stress.Conclusion: Non-Arrhenius behaviors (including a linear behavior) were obtained for the amorphous nano oxide thin-film transistors within 303∼425 K, suggesting their potential to be adjusted by measurement processes and be applied as temperature sensors for numerous medical applications.Keywords: thin film transistors, TFTs, temperature, amorphous nano oxide semiconductors, AOS, body temperature sensors, medical applications
