Enhancing device characteristics of pentacene-based organic transistors through graphene integration: A simulation study and performance analysis

Abstract

Transistors find application within various integrated circuits (ICs) alongside a multitude of electronic devices. These ICs have become integral components in contemporary systems. When organic semiconducting materials constitute the active layer, transistors are termed “organic transistors.” The enhancement of diverse device characteristics is achievable through the modeling and simulation of these organic transistors. This study focuses on the simulation of different configurations of pentacene-based organic transistors. To augment device performance, an active layer comprising pentacene is coupled with 5 and 15 nm graphene. Notably, the top gate configuration yields an increase in ON/OFF ratio from 102 to 107, accompanied by an enhancement in sub-threshold swing from 276 to 59 mV/decade. Similarly, the bottom gate configuration exhibits an ON/OFF ratio improvement from 105 to 109, alongside a sub-threshold swing enhancement from 108 to 59 mV/decade. Leveraging graphene as the active layer material results in substantial benefits. These encompass a heightened on-current of 210 mA, a reduced sub-threshold swing of 58 mV/decade, and a significantly enhanced ON/OFF ratio of 1017.