Aluminum oxide (AlOx) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlOx) was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled implanting nitrogen into the device to reduce dangling bonds and achieve the desired passivation effect. Depositing AlOx on the surface of a solar cell increased the short-circuit current density (Jsc); open-circuit voltage (Voc); and conversion efficiency from 27.84 mA/cm2; 0.52 V; and 8.97% to 29.34 mA/cm2; 0.54 V; and 9.68%; respectively. After controlling the depth and concentration of nitrogen by modulating the PIII energy; the ideal PIII condition was determined to be 2 keV and 10 min. As a result; a 15.42% conversion efficiency was thus achieved; and the Jsc; Voc; and fill factor were 37.78 mA/cm2; 0.55 V; and 0.742; respectively.
