The Growth and Assessment of GaAs Epitaxial Layers Obtained From
Ga-As-Bi Solutions

J.  Kozlowski; M.  Panek; M.  Ratuszek; M.  Tlaczala

doi:10.1155/1987/58065

Active and Passive Electronic Components (Jan 1987)

The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions

J. Kozlowski,
M. Panek,
M. Ratuszek,
M. Tlaczala

Affiliations

J. Kozlowski: Institute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, Poland
M. Panek: Institute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, Poland
M. Ratuszek: Institute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, Poland
M. Tlaczala: Institute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, Poland

DOI: https://doi.org/10.1155/1987/58065
Journal volume & issue: Vol. 12, no. 4
pp. 223 – 229

Abstract

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X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the GaAs epitaxial layers on semi-insulating GaAs:Cr(100) substrates has been used.

Published in Active and Passive Electronic Components

ISSN: 0882-7516 (Print); 1563-5031 (Online)
Publisher: Wiley
Country of publisher: United Kingdom
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://onlinelibrary.wiley.com/journal/5080

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