Boosting Pseudocapacitive Behavior of Supercapattery Electrodes by Incorporating a Schottky Junction for Ultrahigh Energy Density

Selvaraj Seenivasan; Kyu In Shim; Chaesung Lim; Thangavel Kavinkumar; Amarnath T. Sivagurunathan; Jeong Woo Han; Do-Heyoung Kim

doi:10.1007/s40820-023-01016-6

Nano-Micro Letters (Mar 2023)

Boosting Pseudocapacitive Behavior of Supercapattery Electrodes by Incorporating a Schottky Junction for Ultrahigh Energy Density

Selvaraj Seenivasan,
Kyu In Shim,
Chaesung Lim,
Thangavel Kavinkumar,
Amarnath T. Sivagurunathan,
Jeong Woo Han,
Do-Heyoung Kim

Affiliations

Selvaraj Seenivasan: School of Chemical Engineering, Chonnam National University
Kyu In Shim: Division of Environmental Science and Engineering, Pohang University of Science and Technology (POSTECH)
Chaesung Lim: Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)
Thangavel Kavinkumar: School of Chemical Engineering, Chonnam National University
Amarnath T. Sivagurunathan: School of Chemical Engineering, Chonnam National University
Jeong Woo Han: Division of Environmental Science and Engineering, Pohang University of Science and Technology (POSTECH)
Do-Heyoung Kim: School of Chemical Engineering, Chonnam National University

DOI: https://doi.org/10.1007/s40820-023-01016-6
Journal volume & issue: Vol. 15, no. 1
pp. 1 – 21

Abstract

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Highlights Incorporation of Schottky Junction increases the pseudocapacitive mechanism at higher current rate. The pseudocapacitance behavior of the positive and negative electrodes is balanced to construct a solid-state supercapattery device. An energy density of 236.14 Wh kg−1 is achieved for solid-state supercapattery device.

Published in Nano-Micro Letters

ISSN: 2311-6706 (Print); 2150-5551 (Online)
Publisher: SpringerOpen
Country of publisher: Germany
LCC subjects: Technology
Website: http://www.springer.com/40820

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