Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends
Rui Cao,
Sidi Fan,
Peng Yin,
Chunyang Ma,
Yonghong Zeng,
Huide Wang,
Karim Khan,
Swelm Wageh,
Ahmed A. Al-Ghamd,
Ayesha Khan Tareen,
Abdullah G. Al-Sehemi,
Zhe Shi,
Jing Xiao,
Han Zhang
Affiliations
Rui Cao
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Sidi Fan
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Peng Yin
College of Photoelectrical Engineering, Changchun University of Science and Technology, Changchun 130022, China
Chunyang Ma
Research Center of Circuits and Systems, Peng Cheng Laboratory (PCL), Shenzhen 518055, China
Yonghong Zeng
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Huide Wang
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Karim Khan
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Swelm Wageh
Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
Ahmed A. Al-Ghamd
Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
Ayesha Khan Tareen
School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
Abdullah G. Al-Sehemi
Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha 61413, Saudi Arabia
Zhe Shi
School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
Jing Xiao
College of Physics and Electronic Engineering, Taishan University, Tai’an 271000, China
Han Zhang
Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.
