ACS Omega
(Aug 2023)
Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor
- Dawid Jarosz,
- Marcin Stachowicz,
- Piotr Krzeminski,
- Marta Ruszala,
- Anna Jus,
- Pawel Sliz,
- Dariusz Ploch,
- Michal Marchewka
Affiliations
- Dawid Jarosz
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
- Marcin Stachowicz
- Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
- Piotr Krzeminski
- Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland
- Marta Ruszala
- Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland
- Anna Jus
- Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland
- Pawel Sliz
- Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland
- Dariusz Ploch
- Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland
- Michal Marchewka
- Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Rzeszow, Poland
- DOI
-
https://doi.org/10.1021/acsomega.3c04777
- Journal volume & issue
-
Vol. 8,
no. 36
pp.
32998
– 33005
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