Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes

Arata Yasuda; Ken Suto; Jun-ichi Nishizawa

Results in Physics (Jan 2016)

Negative resistance of reverse-biased PbSnTe/PbTe double heterojunction diodes

Arata Yasuda,
Ken Suto,
Jun-ichi Nishizawa

Affiliations

Arata Yasuda: Department of Creative Engineering, National Institute of Technology, Tsuruoka College, Sawada 104, Inooka, Tsuruoka 997-8511, Japan; Department of Materials Science and Engineering, Graduate School of Engineering, Tohoku University, Aramakiaza Aoba, Sendai 980-0845, Japan; Corresponding author at: Department of Creative Engineering, National Institute of Technology, Tsuruoka College, Sawada 104, Inooka, Tsuruoka 997-8511, Japan. Tel.: +81 (0)235 25 9064.
Ken Suto: Semiconductor Research Institute of Semiconductor Research Foundation, Aramaki Aza Aoba 519-1176, Sendai 980-0845, Japan
Jun-ichi Nishizawa: Semiconductor Research Institute of Semiconductor Research Foundation, Aramaki Aza Aoba 519-1176, Sendai 980-0845, Japan

Journal volume & issue: Vol. 6
pp. 41 – 42

Abstract

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Reverse-biased PbSnTe/PbTe double heterojunction diodes uniquely exhibit negative resistance. This property is assumed to originate from point defects in the deep levels of the diode crystal structure. Keywords: PbTe, PbSnTe, Narrow band gap semiconductors, Negative resistance, Reverse bias, Deep levels

Published in Results in Physics

ISSN: 2211-3797 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Science: Physics
Website: http://www.journals.elsevier.com/results-in-physics/

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