Band insulator to Mott insulator transition in 1T-TaS2

Y. D. Wang; W. L. Yao; Z. M. Xin; T. T. Han; Z. G. Wang; L. Chen; C. Cai; Yuan Li; Y. Zhang

doi:10.1038/s41467-020-18040-4

Nature Communications (Aug 2020)

Band insulator to Mott insulator transition in 1T-TaS2

Y. D. Wang,
W. L. Yao,
Z. M. Xin,
T. T. Han,
Z. G. Wang,
L. Chen,
C. Cai,
Yuan Li,
Y. Zhang

Affiliations

Y. D. Wang: International Center for Quantum Materials, School of Physics, Peking University
W. L. Yao: International Center for Quantum Materials, School of Physics, Peking University
Z. M. Xin: International Center for Quantum Materials, School of Physics, Peking University
T. T. Han: International Center for Quantum Materials, School of Physics, Peking University
Z. G. Wang: International Center for Quantum Materials, School of Physics, Peking University
L. Chen: International Center for Quantum Materials, School of Physics, Peking University
C. Cai: International Center for Quantum Materials, School of Physics, Peking University
Yuan Li: International Center for Quantum Materials, School of Physics, Peking University
Y. Zhang: International Center for Quantum Materials, School of Physics, Peking University

DOI: https://doi.org/10.1038/s41467-020-18040-4
Journal volume & issue: Vol. 11, no. 1
pp. 1 – 7

Abstract

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1T-TaS2 possesses complex electronic phase behaviors in transition-metal di-chalcogenides, undergoing several charge-ordered phases before finally into an insulating state of unknown origin. Here, the authors determine its electronic and structural properties experimentally, revealing its origin.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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