Controllable synthesis of indium oxide nanorod‐flowers for high field emission performance

Abstract

Abstract In this paper, indium oxide (In2O3) nanomaterials are successfully synthesized on the silicon substrates by hydrothermal method and calcination. By changing the ratio of raw materials, In2O3 exhibits three morphologies of nanorods, nanomaces, and nanorod‐flowers. Among the three morphologies of In2O3 nanomaterials, the nanorod‐flowers shaped In2O3 shows a strong field emission property, the turn‐on electric field as low as 0.97 V/µm and the field enhancement factor β up to 1053. The excellent performance is attributed to the higher length to diameter (L/D) ratio of the emitting tips and the better crystal quality for nanorod‐flowers shaped In2O3. The authors also show that for the nanorod‐flowers shaped In2O3, increasing separation distance, the turn‐on electric field increases up to about 3.67 V/µm and β decreases to 573 at d = 900 µm. This work provides new insights to design and synthesize nanomaterials with excellent field emission properties.

Keywords

• crystal growth
• electronic materials
• field emission
• In2O3 nanorod‐flowers
• microstructure