A simulated fabrication and characterization of a 65 nm floating-gate MOS transistor☆

Abstract

The aim of this study was to virtual fabricate and characterize a Floating-gate MOS transistor of the 65 nm process. The fabrication process was designed and characterized using the TCAD Silvaco tools. In our work, a detailed flow and the parameters are proposed to virtual fabricate the complete Floating-gate MOS transistor, which has extraordinary performances. The MOS has a large timing window of 4 V, a high gate capacitance ratio parameter of 0.645, and a high Write/Erase speed of 50 ms/70 ms. Interestingly, the results are obtained with a thin thickness of 9 nm of a tunnel oxide layer which is smaller than such layer in other works and low supply voltages in which the control gate, drain, and source voltage values are ± 6 V, 1 V, and 1 V, respectively. In addition, our paper presents the effect of the control gate voltage on the performance of the device when it increases from 6 V to 18 V.

Keywords

• Floating-gate MOS
• Flash memory cell
• Tunneling effects
• CMOS technology
• Gate leakage current
• TCAD tool