Dianzi Jishu Yingyong (Jan 2018)

Design of a bandgap reference with low temperature drift and high power supply rejection ratio

  • Qing Xudong,
  • Zhong Li,
  • Wang Yonglu,
  • Qin Shaohong,
  • Chen Zhenzhong

DOI
https://doi.org/10.16157/j.issn.0258-7998.171992
Journal volume & issue
Vol. 44, no. 1
pp. 17 – 19

Abstract

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Based on bandgap voltage reference structure in the traditional current mode and the first-order compensation of the voltage reference output characteristics, introducing a subsection compensation circuit,which significantly improve the accuracy of voltage reference in a wide temperature range(-50~150 ℃). At the same time, the circuit is simply improved, the output voltage to obtain a high power supply rejection ratio .Using TSMC 65 nm CMOS process simulation model, in the power supply voltage of 1.5 V, power supply rejection ratio is -83.6 dB, temperature coefficient is 2.27 ppm/℃.

Keywords