Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films’” [APL Mater. 8, 089101 (2020)]

• A F M Anhar Uddin Bhuiyan,
• Zixuan Feng,
• Jared M. Johnson,
• Hsien-Lien Huang,
• Jith Sarker,
• Menglin Zhu,
• Md Rezaul Karim,
• Baishakhi Mazumder,
• Jinwoo Hwang,
• Hongping Zhao

Affiliations

A F M Anhar Uddin Bhuiyan

Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Zixuan Feng

Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Jared M. Johnson

Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Hsien-Lien Huang

Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Jith Sarker

Department of Materials Design and Innovation, University at Buffalo, Buffalo, New York 14260, USA

Menglin Zhu

Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Md Rezaul Karim

Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Baishakhi Mazumder

Department of Materials Design and Innovation, University at Buffalo, Buffalo, New York 14260, USA

Jinwoo Hwang

Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Hongping Zhao

Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA