GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
Wen Chen,
Meixin Feng,
Yongjun Tang,
Jian Wang,
Jianxun Liu,
Qian Sun,
Xumin Gao,
Yongjin Wang,
Hui Yang
Affiliations
Wen Chen
Jiangxi Institute of Nanotechnology, Nanchang 330200, China
Meixin Feng
Jiangxi Institute of Nanotechnology, Nanchang 330200, China
Yongjun Tang
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
Jian Wang
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
Jianxun Liu
Jiangxi Institute of Nanotechnology, Nanchang 330200, China
Qian Sun
Jiangxi Institute of Nanotechnology, Nanchang 330200, China
Xumin Gao
Grünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Yongjin Wang
Grünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Hui Yang
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.
