Room-Temperature (RT) Extended Short-Wave Infrared (e-SWIR) Avalanche Photodiode (APD) with a 2.6 µm Cutoff Wavelength
Michael Benker,
Guiru Gu,
Alexander Z. Senckowski,
Boyang Xiang,
Charles H. Dwyer,
Robert J. Adams,
Yuanchang Xie,
Ramaswamy Nagarajan,
Yifei Li,
Xuejun Lu
Affiliations
Michael Benker
Department of Electrical and Computer Engineering, University of Massachusetts Dartmouth, North Dartmouth, MA 02747, USA
Guiru Gu
Department of Physics, Stonehill College, Easton, MA 02357, USA
Alexander Z. Senckowski
Harnessing Emerging Research Opportunities to Empower Soldiers (HEROES), University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
Boyang Xiang
Department of Civil and Environmental Engineering, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
Charles H. Dwyer
Department of Physics, Stonehill College, Easton, MA 02357, USA
Robert J. Adams
Department of Physics, Stonehill College, Easton, MA 02357, USA
Yuanchang Xie
Department of Civil and Environmental Engineering, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
Ramaswamy Nagarajan
Department of Plastic Engineering, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
Yifei Li
Department of Electrical and Computer Engineering, University of Massachusetts Dartmouth, North Dartmouth, MA 02747, USA
Xuejun Lu
Harnessing Emerging Research Opportunities to Empower Soldiers (HEROES), University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher indium (In) composition, specifically In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures. The detection cut-off wavelength is successfully extended to 2.6 µm at RT, as verified by the Fourier Transform Infrared Spectrometer (FTIR) detection spectrum measurement at RT. The In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures are lattice-matched to GaSb substrates, ensuring high material quality. The noise current at RT is analyzed and found to be the shot noise-limited at RT. The e-SWIR APD achieves a high multiplication gain of M~190 at a low bias of Vbias=− 2.5 V under illumination of a distributed feedback laser (DFB) with an emission wavelength of 2.3 µm. A high photoresponsivity of R>140 A/W is also achieved at the low bias of Vbias=−2.5 V. This type of highly sensitive e-SWIR APD, with a high internal gain capable of RT operation, provides enabling technology for e-SWIR sensing and imaging while significantly reducing size, weight, and power consumption (SWaP).
