Regulating strain in perovskite thin films through charge-transport layers

Ding-Jiang Xue; Yi Hou; Shun-Chang Liu; Mingyang Wei; Bin Chen; Ziru Huang; Zongbao Li; Bin Sun; Andrew H. Proppe; Yitong Dong; Makhsud I. Saidaminov; Shana O. Kelley; Jin-Song Hu; Edward H. Sargent

doi:10.1038/s41467-020-15338-1

Nature Communications (Mar 2020)

Regulating strain in perovskite thin films through charge-transport layers

Ding-Jiang Xue,
Yi Hou,
Shun-Chang Liu,
Mingyang Wei,
Bin Chen,
Ziru Huang,
Zongbao Li,
Bin Sun,
Andrew H. Proppe,
Yitong Dong,
Makhsud I. Saidaminov,
Shana O. Kelley,
Jin-Song Hu,
Edward H. Sargent

Affiliations

Ding-Jiang Xue: Department of Electrical and Computer Engineering, University of Toronto
Yi Hou: Department of Electrical and Computer Engineering, University of Toronto
Shun-Chang Liu: Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences
Mingyang Wei: Department of Electrical and Computer Engineering, University of Toronto
Bin Chen: Department of Electrical and Computer Engineering, University of Toronto
Ziru Huang: Department of Electrical and Computer Engineering, University of Toronto
Zongbao Li: Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences
Bin Sun: Department of Electrical and Computer Engineering, University of Toronto
Andrew H. Proppe: Department of Electrical and Computer Engineering, University of Toronto
Yitong Dong: Department of Electrical and Computer Engineering, University of Toronto
Makhsud I. Saidaminov: Department of Electrical and Computer Engineering, University of Toronto
Shana O. Kelley: Department of Chemistry, University of Toronto
Jin-Song Hu: Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences
Edward H. Sargent: Department of Electrical and Computer Engineering, University of Toronto

DOI: https://doi.org/10.1038/s41467-020-15338-1
Journal volume & issue: Vol. 11, no. 1
pp. 1 – 8

Abstract

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Remnant tensile strain in the perovskite films induced in the thermal annealing step is a known source of material and device instabilities. Here Xue et al. use a thermal expandable hole transporting layer to compensate the strain and result in most stable wide-bandgap perovskite solar cells so far.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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