High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process

Abstract

We introduce a novel, high-throughput processing method to produce high-efficiency solar cells via a backside rounding process and ion implantation. Ion implantation combined with a backside rounding process is investigated. The ion implantation process substituted for thermal POCl3 diffusion performs better uniformity (<3%). The U-4100 spectrophotometer shows that wafers with backside rounding process perform higher reflectivity at long wavelengths. Industrial screen printed (SP) Al-BSF on different etching depth groups was analyzed. SEMs show that increasing etch depth improves back surface field (BSF). The - measurement revealed that etching depths of 6 μm ± 0.1 μm due to having the highest and , it has the best performance. SEMs also show that higher etching depths also produce uniform Al melting and better BSF. This is in agreement with IQE response data at long wavelengths.