On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes

Chunshuang Chu; Kangkai Tian; Jiamang Che; Hua Shao; Jianquan Kou; Yonghui Zhang; Zi-Hui Zhang; Hao-Chung Kuo

doi:10.1109/JPHOT.2020.2997343

IEEE Photonics Journal (Jan 2020)

On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes

Chunshuang Chu,
Kangkai Tian,
Jiamang Che,
Hua Shao,
Jianquan Kou,
Yonghui Zhang,
Zi-Hui Zhang,
Hao-Chung Kuo

Affiliations

Chunshuang Chu: ORCiD; Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, China
Kangkai Tian: ORCiD; Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, China
Jiamang Che: ORCiD; Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, China
Hua Shao: ORCiD; Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, China
Jianquan Kou: ORCiD; Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, China
Yonghui Zhang: ORCiD; Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, China
Zi-Hui Zhang: ORCiD; Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, China
Hao-Chung Kuo: Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan

DOI: https://doi.org/10.1109/JPHOT.2020.2997343
Journal volume & issue: Vol. 12, no. 3
pp. 1 – 7

Abstract

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In this work, we have investigated the origin of efficiency droop for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be caused by the electron leakage for DUV LEDs studied in this work. The electron leakage arises from the unbalanced electron and hole injection efficiencies. The correlation between the efficiency droop and the electron leakage can be numerically calculated by manipulating the conduction band barrier height of the p-AlGaN electron blocking layer (p-EBL) for the proposed DUV LEDs. For the purpose of demonstrating that the efficiency droop for DUV LEDs can be experimentally decreased by reducing the electron leakage, a p+-GaN/In0.15Ga0.85N/n+-GaN tunnel junction on DUV LED is grown by using metal organic chemical vapor deposition (MOCVD) technology. The tunnel junction helps to enhance the hole injection, thus decreasing the electron leakage and the efficiency droop. Moreover, the parasitic emission in the p-type hole injection layer is no longer observed thanks to the decreased electron leakage level.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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