High-Performance Semi-Polar InGaN&#x002F;GaN Green Micro Light-Emitting Diodes

Fei-Fan Xu; Tao Tao; Bin Liu; Xuan Wang; Mao-Gao Gong; Ting Zhi; Dan-Feng Pan; Zi-Li Xie; Yu-Gang Zhou; You-Dou Zheng; Rong Zhang

doi:10.1109/JPHOT.2019.2962184

IEEE Photonics Journal (Jan 2020)

High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Fei-Fan Xu,
Tao Tao,
Bin Liu,
Xuan Wang,
Mao-Gao Gong,
Ting Zhi,
Dan-Feng Pan,
Zi-Li Xie,
Yu-Gang Zhou,
You-Dou Zheng,
Rong Zhang

Affiliations

Fei-Fan Xu: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
Tao Tao: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
Bin Liu: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
Xuan Wang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
Mao-Gao Gong: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
Ting Zhi: College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing
Dan-Feng Pan: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
Zi-Li Xie: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
Yu-Gang Zhou: ORCiD; Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
You-Dou Zheng: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing
Rong Zhang: Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing

DOI: https://doi.org/10.1109/JPHOT.2019.2962184
Journal volume & issue: Vol. 12, no. 1
pp. 1 – 7

Abstract

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Semi-polar micro-LEDs have gain increasing interests due to the advantages of polarization control and quantum efficiency improvement. In this work, a novel semi-polar (20-21)-plane micro-LEDs array has been designed and manufactured. In comparison with c-plane micro-LEDs, semi-polar micro-LEDs indicate better electrical and optical performance. The relative EQE of semi-polar micro-LEDs remains at 62% under the injected current density of 775.6 A/cm2, which indicates a reduced efficiency droop due to less polarization in MQWs. It has been further proved by a significant reduction of 55% in emission peak blue-shift under the injected current density from 11.1 A/cm2 to 775.6 A/cm2. In addition, the carrier recombination dynamics and spatial light distribution of semi-polar micro-LEDs with different pixel sizes have been studied. Fast recombination lifetime in smaller size semi-polar micro-LEDs indicates a promising way to be used as a high modulation bandwidth light source. Stable and uniform light distribution in a wider range of spatial azimuths further supports for the semi-polar micro-LEDs as a strong candidate for the applications of high-resolution display and high-speed visible light communication.

Published in IEEE Photonics Journal

ISSN: 1943-0655 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics; Science: Physics: Optics. Light
Website: http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=4563994

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