AIP Advances (Nov 2020)

Temperature-dependent growth of topological insulator Bi2Se3 for nanoscale fabrication

  • Muhammad Naveed,
  • Zixiu Cai,
  • Haijun Bu,
  • Fucong Fei,
  • Syed Adil Shah,
  • Bo Chen,
  • Azizur Rahman,
  • Kangkang Zhang,
  • Faji Xie,
  • Fengqi Song

DOI
https://doi.org/10.1063/5.0021125
Journal volume & issue
Vol. 10, no. 11
pp. 115202 – 115202-7

Abstract

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Topological insulators and their characteristics are among the most highly studied areas in condensed matter physics. Bi2Se3 nanocrystals were synthesized via chemical vapor deposition at different temperatures on a silicon substrate with a gold catalyst. The effects of temperature on the obtained Bi2Se3 nanocrystals were systematically investigated. The size and length of Bi2Se3 nanocrystals change when the temperature increases from 500 °C to 600 °C. We found that the crystallization quality of the Bi2Se3 nanocrystals synthesized at 560 °C is optimal. At this temperature, we can get the desired thickness and length of the nanocrystals, which is quite suitable for nanoscale fabrication.