Interface-induced transverse resistivity anomaly in AgNbO3/SrRuO3 heterostructures

Ruxin Liu; Ruijie Xu; Yequan Chen; Liqi Zhou; Wenzhuo Zhuang; Xu Zhang; Chong Zhang; Zhongqiang Chen; Liming Chen; Xuefeng Wang

doi:10.1063/5.0192702

APL Materials (Feb 2024)

Interface-induced transverse resistivity anomaly in AgNbO3/SrRuO3 heterostructures

Ruxin Liu,
Ruijie Xu,
Yequan Chen,
Liqi Zhou,
Wenzhuo Zhuang,
Xu Zhang,
Chong Zhang,
Zhongqiang Chen,
Liming Chen,
Xuefeng Wang

Affiliations

Ruxin Liu: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Ruijie Xu: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Yequan Chen: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Liqi Zhou: College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
Wenzhuo Zhuang: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Xu Zhang: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Chong Zhang: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Zhongqiang Chen: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Liming Chen: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Xuefeng Wang: Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

DOI: https://doi.org/10.1063/5.0192702
Journal volume & issue: Vol. 12, no. 2
pp. 021122 – 021122-6

Abstract

Read online

The transverse resistivity anomaly with a hump feature, associated with topological magnetic textures, is of paramount importance for the applications of next-generation chiral spintronic devices. However, the origin of the hump feature still remains debated due to the complicated mechanism, not merely assigned to the intrinsic topological Hall effect (THE). In this work, we observe the apparent transverse resistivity hump characteristic superimposed on the Hall signals in AgNbO3/SrRuO3 (ANO/SRO) heterostructures. The intrinsic THE is ruled out by minor-loop and current density measurements. Combining the microscopic characterization and the two-channel anomalous Hall effect fitting, the hump feature is unambiguously attributed to the synergetic contribution from the SRO layer and the interfacial intermixing thin layer of ANO and SRO.

Published in APL Materials

ISSN: 2166-532X (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Technology: Chemical technology: Biotechnology; Science: Physics
Website: http://aplmaterials.aip.org

About the journal