The OFF-state retention characteristics of Pt/NiOx–(Ar)/NiOx–(Ar + O2)/Pt stacking resistive random access memory structures were measured as a function of temperature between 300 and 190 K. The devices show random telegraph noise effects whose noise amplitude increases upon lowering the temperature. Interestingly, the application of forward and reverse biases produces up and downresistance jumps. These results present important insights into the thermally activated charge trapping/de-trapping phenomenon that is responsible for resistance fluctuations.
