Scientific Reports (Oct 2024)

Mechanisms of enhanced performance in Zr4+/Ta5+ codoped rutile–TiO2 ceramics via broadband dielectric spectroscopy

  • Yasumin Mingmuang,
  • Narong Chanlek,
  • Masaki Takesada,
  • Viyada Harnchana,
  • Wirat Jarernboon,
  • Pairot Moontragoon,
  • Pornjuk Srepusharawoot,
  • Ekaphan Swatsitang,
  • Prasit Thongbai

DOI
https://doi.org/10.1038/s41598-024-73732-x
Journal volume & issue
Vol. 14, no. 1
pp. 1 – 13

Abstract

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Abstract Aliovalent dopant codoped rutile–TiO2 materials have garnered attention due to their excellent performance properties, characterized by low loss tangent (tanδ), high dielectric permittivity (ε′), and stable ε′ over a broad temperature range. This performance is primarily due to the electron−pinned defect−dipoles (EPDDs) of the complex defects $$A_{2}^{{3+}}{\text{V}}_{{\text{O}}}^{{ \cdot \cdot }}$$ Ti3+– $${\text{Nb}}_{2}^{{5+}}$$ Ti3+ B Ti. Notably, the excellent dielectric properties in Zr x Ta2.5%Ti0.975−x O2 (Zr–TTO) ceramics can be achieved using the traditional mixed oxide method without the EPDDs, due to the absence of A3+ (acceptor doping ions). Instead, the existence of localized free electrons and oxygen vacancies ( $${\text{V}}_{{\text{O}}}^{{ \cdot \cdot }}$$ ) in Zr–TTO structures, due to doping ions and the sintering process, was confirmed by X–ray photoelectron and Raman spectroscopies. These ceramics exhibited ε′~ 2 × 104 and tanδ < 0.03 at 1 kHz and 25 °C in the 2.5–10%Zr–TTO samples. Moreover, all ceramics demonstrated a maximum ε′ change (∆ε′) of less than ±15% over the temperature range suitable for X7R and X8R type ceramic capacitors. Significantly, the change in ε′ related to relative humility was calculated to be less than ±0.5% over the range of 50–95% RH, indicating the environmental stability of the dielectric properties, which is essential for capacitor applications. Investigations suggested that at least four mechanisms contributed to this system: the intrinsic effect of ionic polarization, Ti4+ · e– – $${\text{V}}_{{\text{O}}}^{{ \cdot \cdot }}$$ – Ti4+ · e– and Ti4+ · e– – $${\text{Ta}}_{{{\text{Ti}}}}^{ \cdot }$$ defects, interfacial polarization at insulating grain boundaries, and non–Ohmic contact between the surface sample and the metal electrode.

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