Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki (Jun 2019)

Switching and memory effects in thin film disoder chalcoginide semiconductors

  • B. S. Kolosnitcin,
  • E. F. Troyan

Journal volume & issue
Vol. 0, no. 2
pp. 25 – 30

Abstract

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The possibility of creation of thin film memory elements and threshold switching elements on the base of one chalcogenide - tellurium is analyzed in the proposed article.

Keywords