Epitaxial integration and properties of SrRuO3 on
silicon
Zhe Wang,
Hari P. Nair,
Gabriela C. Correa,
Jaewoo Jeong,
Kiyoung Lee,
Eun Sun Kim,
Ariel Seidner H.,
Chang Seung Lee,
Han Jin Lim,
David A. Muller,
Darrell G. Schlom
Affiliations
Zhe Wang
School of Applied and Engineering Physics, Cornell
University, Ithaca, New York 14853, USA
Hari P. Nair
Department of Materials Science and Engineering,
Cornell University, Ithaca, New York 14853, USA
Gabriela C. Correa
Department of Materials Science and Engineering,
Cornell University, Ithaca, New York 14853, USA
Jaewoo Jeong
New Memory Technology Lab, Semiconductor R&D
Center, Samsung Electronics, Milpitas, California 95053,
USA
Kiyoung Lee
Platform Technology Laboratory, Samsung Advanced
Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro,
Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Eun Sun Kim
Samsung Semiconductor R&D Center
1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South
Korea
Ariel Seidner H.
Department of Materials Science and Engineering,
Cornell University, Ithaca, New York 14853, USA
Chang Seung Lee
Platform Technology Laboratory, Samsung Advanced
Institute of Technology (SAIT), Samsung Electronics, 130 Samsung-ro,
Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Han Jin Lim
Samsung Semiconductor R&D Center
1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South
Korea
David A. Muller
School of Applied and Engineering Physics, Cornell
University, Ithaca, New York 14853, USA
Darrell G. Schlom
Department of Materials Science and Engineering,
Cornell University, Ithaca, New York 14853, USA
We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer. The resulting SrRuO3 film has a rocking curve full width at half maximum of 0.01°, a resistivity at room temperature of 250 μΩ cm, a residual resistivity ratio (ρ300 Kρ4 K) of 11, and a paramagnetic-to-ferromagnetic transition temperature of ∼160 K. These structural, electrical, and magnetic properties compare favorably to the best reported values for SrRuO3 films on silicon and rival those of epitaxial SrRuO3 films produced directly on SrTiO3 single crystals by thin film growth techniques other than molecular-beam epitaxy. These high quality SrRuO3 films with metallic conductivity on silicon are relevant to integrating multi-functional oxides with the workhorse of semiconductor technology, silicon.
