Design of a LNA for ULF wireless communication

Zhang Mengwen; Jin Yufeng

doi:10.16157/j.issn.0258-7998.200825

Dianzi Jishu Yingyong (Jan 2021)

Design of a LNA for ULF wireless communication

Zhang Mengwen,
Jin Yufeng

Affiliations

Zhang Mengwen: Peking University Shenzhen Graduate School，Shenzhen 518055，China
Jin Yufeng: Peking University Shenzhen Graduate School，Shenzhen 518055，China

DOI: https://doi.org/10.16157/j.issn.0258-7998.200825
Journal volume & issue: Vol. 47, no. 1
pp. 46 – 51

Abstract

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This paper introduces the design of low noise amplifier, using for ultra-low frequency. There′s a new loop in the paper, formed by a low-pass transconductance and a self-cascode MOSFET, proposed to stabilize the output bias voltage of the amplifier. By using the loop with the constant transconductance bias circuit, the open-loop gain of the amplifier is constant at about 40 dB. It does not vary with the supply voltage, process and temperature. In the amplifier, a self-cascode MOSFET is used as a gain unit to enable the amplifier output range to reach rail to rail, with the use of full differential current bias. This amplifier has a remarkable in-band high-power supply rejection ratio, up to 101.4 dB. The power ripple has almost no effect on the output signal, when the wearable devices are powered by high impedance sources.

Published in Dianzi Jishu Yingyong

ISSN: 0258-7998 (Print)
Publisher: National Computer System Engineering Research Institute of China
Country of publisher: China
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
Website: http://journal.chinaaet.com/en

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