A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors
Xinyu Wang,
Die Wang,
Yuchen Tian,
Jing Guo,
Jinshui Miao,
Weida Hu,
Hailu Wang,
Kang Liu,
Lei Shao,
Saifei Gou,
Xiangqi Dong,
Hesheng Su,
Chuming Sheng,
Yuxuan Zhu,
Zhejia Zhang,
Jinshu Zhang,
Qicheng Sun,
Zihan Xu,
Peng Zhou,
Honglei Chen,
Wenzhong Bao
Affiliations
Xinyu Wang
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Die Wang
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Yuchen Tian
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Jing Guo
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Jinshui Miao
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; Corresponding authors.
Weida Hu
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Hailu Wang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Kang Liu
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Lei Shao
School of Electronic Information, Soochow University, Suzhou 215006, China; Corresponding authors.
Saifei Gou
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Xiangqi Dong
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Hesheng Su
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Chuming Sheng
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Yuxuan Zhu
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Zhejia Zhang
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Jinshu Zhang
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Qicheng Sun
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
Zihan Xu
Shenzhen Six Carbon Technology, Shenzhen 518055, China
Peng Zhou
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China; Shaoxin Laboratory, Shaoxing 312000, China
Honglei Chen
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; Corresponding authors.
Wenzhong Bao
State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China; Shaoxin Laboratory, Shaoxing 312000, China; Corresponding authors.
Photodetectors (PDs) are crucial in modern society as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technologies. Image sensor technology has been hindered due to the lack of a universal system that can integrate all types of PDs with silicon-based readout integrated circuits (ROICs). To address this issue, we conducted experiments adopting two-dimensional materials as an example. High-performance MoS2-/MoTe2-based PDs were fabricated in the current work and the most suitable ROICs were identified to pair with them. This established a solid foundation for further researches in the field of image sensors. We developed and implemented a versatile testing system that uses a printed circuit board to connect the PD and ROIC. After the ROIC generates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce a high-quality image that is visible to the naked eye. This universal system can be used with a wide range of PD and ROIC types made from different materials, making it highly convenient for diverse testing applications and the development of diverse image sensor types. This robust new platform is expected to spur further innovation and advancements in this rapidly developing field.
