Materials (Jun 2024)

TaF<sub>4</sub>: A Novel Two-Dimensional Antiferromagnetic Material with a High Néel Temperature Investigated Using First-Principles Calculations

  • Jia Luo,
  • Qingkai Zhang,
  • Jindong Lin,
  • Yuxiang Ni,
  • Hongyan Wang,
  • Yongliang Tang,
  • Mu Lan

DOI
https://doi.org/10.3390/ma17112780
Journal volume & issue
Vol. 17, no. 11
p. 2780

Abstract

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The structural, electronic, and magnetic properties of a novel two-dimensional monolayer material, TaF4, are investigated using first-principles calculations. The dynamical and thermal stabilities of two-dimensional monolayer TaF4 were confirmed using its phonon dispersion spectrum and molecular dynamics calculations. The band structure obtained via the high-accuracy HSE06 (Heyd–Scuseria–Ernzerhof 2006) functional theory revealed that monolayer two-dimensional TaF4 is an indirect bandgap semiconductor with a bandgap width of 2.58 eV. By extracting the exchange interaction intensities and magnetocrystalline anisotropy energy in a J1-J2-J3-K Heisenberg model, it was found that two-dimensional monolayer TaF4 possesses a Néel-type antiferromagnetic ground state and has a relatively high Néel temperature (208 K) and strong magnetocrystalline anisotropy energy (2.06 meV). These results are verified via the magnon spectrum.

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